# Power Mosfet model parameters

Drain to Source On-Resistance | RDS(on) = |  | mOhm (25oC)
Spice Transconductance | KP = |  | S (25oC)
Gate threshold voltage | Vto = |  | V
Drain Inductance | LD = |  | nH
Input Capacitance | Ciss = |  | pF
Output Capacitance | Coss = |  | pF
Reverse Transfer Capacitance | Crss = |  | pF
Calculate CGD and CGS |  |
Gate-Source Capacitance | CGS = |  | pF
Gate-Drain Capacitance | CGD = |  | pF
Drain-Source Capacitance | CDS = |  | pF
Model name | ModelName = |  |
.Model | Model = |  |
Write results to .model file |  |  |  |
Reset form |  |  |  |

Ohmic region (Normal operation) | VDS=RDS(on)*IDS IDS=(KP/2)VDS(2(VGS-VTO)-VDS)
Active region (Saturation) | IDS=(KP/2)(VGS-VTO)2
CGD | Junction Capacitance CGD(VGD)=CGD/SQRT((1-(VGD/0.5)))
RDS(on) | Doubled every 100o temperature rise
KP | Doubled every 100o temperature rise